A. Positions for Early stage reserachers (ESR)
ESR#01 — Growth of III-N nanowire arrays on pre-structured substrates
Host institution: Georg-August-Universität Göttingen, Germany
Start: April 2011 (duration 36 months)
Contact: Prof. Dr. Angela Rizzi and Dr. Jörg Malindretos
We are seeking applicants for a PhD position in the area of experimental condensed matter physics. In the work package "nanowires for optoelectronics" the focus is on the growth optimisation of InGaN/GaN nanowires with respect to their optical emission properties and their implementation in nanoscale optoelectronic devices.
The ESR at the University of Göttingen (UGOE) will develop and optimise Molecular Beam Epitaxy (MBE) processes for the deposition of InGaN/GaN nanowire array structures on pre-patterned substrates (GaN, Si, SiC). Preliminary studies by the group demonstrate the catalyst-free selective area growth (SAG) of InN nanorods by plasma assisted MBE. The growth studies will be complemented by structural, electrical and optical characterization on-site and in collaboration within the network.
ESR#02 — Sensing properties of functionalized ZnO nanowires
Host institution: Friedrich-Schiller-Universität Jena, Germany
Start: April 2011 (duration 36 months)
Contact: Prof. Dr. Carsten Ronning
The Institute of Solid State Physics at the Friedrich-Schiller-University of Jena (Germany) is seeking applicants for a PhD position in the area of experimental solid state physics with a focus on the properties and function of hybrid nanowire inter- and surfaces. The ESR at the FSU Jena will grow desired IN-VI nanowires via vapour-liquid-solid (VLS) using a simple thermal transport growth technique, treat the surfaces of those wires with appropriate chemicals and bio-molecules, and integrate them into electronic circuits. The final sensing properties of such devices will be investigated as function of the morphology of the nanowires as well as the chemical and biological treatments.
Outstanding candidates must hold a Diploma or Master degree in Physics (or equivalent). Prior experience in nanotechnology is desirable, but strong applicants will be considered regardless of specific experience. We are looking for an encouraged and self-motivated person, who will enjoy the team spirit of a young interdisciplinary research group.
ESR#03 — Optical characterisation of nanowire ensembles and single nanowires
Host institution: Universitat de Valencia, Spain
Start: April 2011 (duration 36 months)
Contact: Dr. Nuria Garro
A PhD position is open in the area of experimental condensed matter physics at the Institute of Material Science of the University of Valencia. The proposed PhD project aims at exploiting the fundamental optical properties of semiconductor nanowires with regard to new optoelectronic and energy harvesting devices. The studies will focus on establishing the enhanced contribution of nanowire surfaces on their optical response, the role of dimension and anisotropy in their dielectric properties, as well as the effects of strain fields and quantum confinement in nanowires containing axial and radial (core/shell) heterostructures. Training on optical spectroscopies, mainly photoluminescence and Raman scattering, and the manipulation and characterisation of single nanowires will be provided. This research will be conducted in close collaboration with other academic and industrial institutions within the network, where the successful candidate will receive additional training.
We are looking for a strongly motivated person holding a Diploma or Master degree in Physics (or equivalent) who will enjoy challenging experimental work and the spirit of an international consortium.
ESR#04 — Simulation of optical and thermal properties of nanowires
Host institution: Universitat de Valencia, Spain
Start: January 2011 (duration 36 months)
Contact: Dr. Nuria Garro
The Material Science Institute of the University of Valencia is seeking applicants for a PhD position in the area of theoretical condensed matter, to develop a project within the EU Initial Training Network (ITN) "NANOWIRING". The Network covers a wide range of research activities on nanowires aimed at their applications in photovoltaic and thermoelectric devices. The present theoretical project will therefore be performed alongside with experimental groups across Europe, and in particularly close collaboration with Georg-August University, Gottingen and CNR-IMEM, Parma. The PhD project will concentrate on the elaboration of theoretical models and computational simulation tools for the analysis of the electronic and vibrational properties of semiconductor nanowires. To this end, the successful student will receive training in multiscale methodologies covering from the continuum modeling of the nanowire systems to its atomistic description, coupled with a dynamical simulation of the electronic and phonon transport properties.
Outstanding candidates must hold a Diploma or Master degree in Physics (or equivalent). Prior experience in condensed matter theory is desirable, but strong applicants will be considered regardless of specific experience. We are looking for a strongly motivated person with good communication and reporting skills.
ESR#05 — Structural and chemical characterisation of semiconductor nanowires by synchrotron radiation
Host institution: Installation Europeenne de Rayonnement Synchrotron, Grenoble, France
Start: April 2011 (duration 36 months)
Contact: Dr. Gema Martinez-Criado
A PhD position is available at the beamline ID22 of the ESRF for the hard X-ray microanalysis of ensembles and single nanowires. Two stations are clearly identified by the spatial resolution: EH1 microprobe devoted to micro-spectroscopy and ID22NI nanoprobe used for nano-analysis. Consisting in the combination of X-ray fluorescence, X-ray absorption spectroscopy, diffraction and X-ray excited optical luminescence imaging techniques in a broad energy range (6-70 keV), the research project seeks for the non-destructive investigation of the spatial distribution, concentration and speciation of trace elements as well as optical transitions in the nanowires to be correlated to the morphology (geometric aspect ratio, anisotropy, size, shape), local structure and crystallographic orientations at the micrometer and nanometer levels.
ESR#06 — Ultrafast dynamics of optically-injected carriers in nanowires
Host institution: University of Cambridge, United Kingdom
Start: January 2011 (duration 36 months)
Contact: Prof. Dr. Richard Phillips
We seek a person interested in experimental optical studies of semiconductor nanowires, with particular emphasis on time-resolved measurements. Depending on available structures the study may involve studies of carrier recombination dynamics, spin relaxation or transport, and the correlation of these properties with growth and surface treatment. The work in Cambridge will be integrated with the application of other analytical techniques, and the growth of the structures elsewhere in the consortium.
ESR#07 — Optical and electrical characterisation of semiconductor nanowires for sensing and energy harvesting applications
Host institution: National University of Ireland, Cork, Ireland
Start: January 2011 (duration 36 months)
Contact: Dr. Daniela Iacopino
Applications are open for a ESR position on the development of chemical functionalisation and characterisation of nanowires for sensing and energy harvesting applications, starting from January 2011. The ESR at Tyndall-UCC will focus on (i) photophysical characterisation of ZnO nanowires and demonstration of ethanol optical sensing; (ii) chemical surface modification of SiC nanowires and demonstration of biological recognition and sensing; (iii) morphological and photophysical characterisation of core shell nanowires and demonstration of increased efficiency in photovoltaic cells.
Applications are invited from scientists who hold (or expect to obtain before January 2011) a first or second class honours undergraduate degree in chemistry, physics, materials science, biochemistry, electronic/electrical engineering or a closely related discipline. The successful student will receive training in all research methods required, and will work alongside experienced professional researchers within the nanotechnology group, attend conferences and publish in high impact journals. The research is supported by a suite of equipment and laboratory facilities within the group that are amongst the best in Europe. The research is conducted in close collaboration with industrial and academic partners, therefore the successful candidate will avail of additional training in partner institutions.
ESR#08 — Optical studies of quantum heterostrucutres in nanowires
Host institution: Delft University of Technology, The Netherlands
Start: January 2011 (duration 36 months)
Contact: Dr. Val Zwiller
We are seeking applicants for a PhD position in the area of experimental condensed matter physics. The project will concentrate on the development of new opto-electronics devices based on nanowire heterostructures, in particular on devices based on single quantum dots in nanowires operating at the single photon and single electron level. The student will work in close collaboration with epitaxial growers (TUE) to optimize the properties of quantum dots in nanowires based on III-V heterostructures. Work performed so far at TUD has demonstrated the operation of a single quantum dot LED in a nanowire. Optical studies, nanoprocessing and material characterization will be performed at TUD and in close collaboration with other groups in the network.
ESR#09 — Development of a simulation tool for nanowire transistor structures
Host institution: Hochschule Rheinmain, Wiesbaden, Germany
Start: April 2011 (duration 36 months)
Contact: Prof. Dr. Klaus Michael Indlekofer
We are seeking applicants for a PhD position in the area of applied theoretical condensed matter physics or related fields. In the workpackage "nanowires for nanoelectronics" the focus is on realistic nanowire-based device structures.
The ESR at the HS-RM will develop an advanced simulation tool for nanowire-transistors, including a graphical user interface. In contrast to standard device simulation approaches which commonly employ a mean-field approximation, the envisioned tool will take few electron Coulomb effects into account which become relevant in nanoelectronic devices. Here, a recently developed multi-configurational approach (MCSCG) will be employed, enabling the self-consistent inclusion of many-body aspects within the scope of a standard nonequilibrium Green's function formalism (NEGF).
These theoretical and programming activities will be complemented by experimental work in collaboration of partners within the Nanowiring project, in particular the Georg-August University Göttingen.
ESR#10 — Growth and characterisation of ZnO and SiC nanowires
Host institution: Consiglio Nazionale delle Ricerche, Parma, Italy
Start: January 2011 (duration 36 months)
Contact: Dr. Alessandra Catellani
We seek a well motivated PhD candidate in the area of experimental solid state physics and material science that should operate in the Chemical Vapour Deposition growth and optical characterization of ZnO and SiC nanowires and nanostructures. In work packages WP1 and WP4 of the Nanowiring project, the focus is on the optimization of nanowire properties (defect control, surface chemistry, doping ...) for sensor applications. Outstanding candidates must hold a Diploma or Master degree in Physics, Material Science or Chemistry. A state of the art knowledge in nanotechnology and/or a previous experimental experience of both CVD growth techniques and investigation of the optical properties of Metal Oxides and Semiconductors will be positively considered. However, strong applicants will be considered regardless of specific experience. A satisfactory proficiency in English is mandatory.
ESR#11 — Simulation of electronic properties of NWs and of their functionalisation schemes
Host institution: Consiglio Nazionale delle Ricerche, Parma, Italy
Start: January 2011 (duration 36 months)
Contact: Dr. Giancarlo Cicero and Dr. Alessandra Catellani
We seek a motivated PhD candidate in computational solid state theory who will be involved in the development of WorkPackage WP4 "Nanowires for energy harvesting" of the Nanowiring Project. The study of both photophysical and piezoelectric properties of clean and functionalized nanowires will be addressed during the 3 years PhD course. Goals are to employ ab initio DFT and Molecular Dynamics simulations to unravel the structural and electronic properties of these nanostructures, understanding their implication in the working principle and efficiency of nanowires based Dye Sensitized Solar Cells and piezoelectric energy harvesting devices. The work will be conducted in strict collaboration with the experimental groups involved in the network.
A satisfactory proficiency in English and a strong interest in computational material science are mandatory. Candidates with previous research experience in ab initio electronic structure calculations will be a strong plus.
ESR#12 — Growth of metal-oxide-nanowires for the detection of organic molecules
Host institution: Centro Ricerche Fiat S.C.P.A., Torino, Italy
Start: January 2011 (duration 36 months)
Contact: Dr. Daniele Pullini
Metal oxide chemical sensors have been investigated for more than five decades, their conductivity varies with the composition of the surrounding gas atmosphere. Metal oxides like SnO2, TiO2, WO3, ZnO, Fe2O3 and In2O3, first in the form of thick films and then thin films, have proven a promising selectivity, when doped with noble metals, at detecting various gases. The objective of this work is to develop and study metal oxide nanowires, in particular ZnO, in order to improve efficiency of detecting organic molecules as ethanol and hydrocarbons. We are seeking for applicants with a multidisciplinary background interested in making an experience in an industrial research context. The research work will be focused on: i) UV photolithography and surface micromachining; ii) fabrication of nanoporous membranes on flat substrates; iii) fabrication of metal oxide nanowires by nanoporous template electrodeposition in the presence of oxygen precursors, iv) morphological and structural characterization of metal oxide nanowires; v) conductivity measurements of nanowire arrays and single nanowires, in the absence and in the presence of organic gases.
ESR#13 — Piezoelectricity in ZnO nanowire arrays
Host institution: Centro Ricerche Fiat S.C.P.A., Torino, Italy
Start: January 2011 (duration 36 months)
Contact: Dr. Daniele Pullini
Mechanical energy can be converted into electrical energy by means of piezoelectric zinc-oxide nanowire (NW) arrays. The coupling of piezoelectric and semiconducting properties in zinc-oxide creates a strain field and charge separation across the NW as a result of a mechanical bending. The objective of the present work is to develop parallel aligned NWs by electrodepositon growth within pre-synthesized nanoporous membranes of high spatial order. We seek for candidates with a multidisciplinary background aiming to make a research experience in an research industrial context. Specific studies on signal treating and conditioning will be appreciated. Selective etching of sacrificial nanoporous-membrances fabricated on micromachined substrates will be developed to chisel 3D nanosystems properly designed to recover the sensing current from free-standing nanowires connected in parallel. The same technology will be used to gauge the potential of ZnO nanowires at recovering energy (energy harvesting applications).
ESR#14 — InGaN nanowire growth on large areas using R&D and production type MOCVD equipment
Host institution: Aixtron AG, Herzogenrath, Germany
Start: April 2011 (duration 36 months)
Contact: Dr. Christoph Giesen
We are seeking applicants for a PhD position in the area of electrical engineering. In the work package "nanowires for optoelectronics" the focus is on the growth optimization of InGaN/GaN nanowires with respect to their optical emission properties and their implementation in nanoscale optoelectronic devices.
The ESR at AIXTRON will develop MOCVD processes for the deposition of InGaN based nanowires. The ESR will focus on the MOCVD growth of single crystalline, defect-free, high density InGaN based nanowires on 4-inch Si-wafers for device applications, p-type and n-type doping, axial or core shell pn-junctions. Also the influence of the MOCVD equipment design on the nanowire deposition will be explored aiming at the optimisation of the MOCVD equipment respecting the special needs of the growth process as well as the later commercialisation of the technology.
ESR#15 — Growth and optical characterisation of InP/InAsP/InP quantum dot nanowires
Host institution: Technische Universiteit Eindhoven, The Netherlands
Start: January 2011 (duration 36 months)
Contact: Prof. Dr. Erik Bakkers
We are looking for a PhD candidate for the growth of InAsP based nanowires for opto electronic applications. The wires are grown by the vapor-liquid-solid (VLS) growth mechanism and we use a metal-organic vapor phase epitaxy (MOVPE) reactor. In order to obtain detailed understanding and good control of the growth we will use patterned arrays of catalyst particles. Goal is to fabricate high quality optical quantum dots in the nanowires for single photon emission. The optical properties will be studied in collaboration with the Delft University (TUD).
B. Positions for Experienced reserachers (ER)
ER#1 — Functional III-N nanowire device structures
Host institution: Georg-August-Universität Göttingen, Germany
Start: July 2011 (duration 24 months)
Contact: Prof. Dr. Angela Rizzi and Dr. Jörg Malindretos
We are seeking applicants for a Post Doc position in the area of experimental condensed matter physics and nanotechnology. All scientific workpackages within the network will develop concepts for functional structures, as e.g. light emitting diodes based on single nanowires and field effect transistor devices for sensing applications. In particular the work package "nanowires for optoelectronics" focuses on the InGaN/GaN nanowires structures and their implementation in nanoscale optoelectronic devices.
The ER at the UGOE will be concerned with the design of the structures and their physical properties as well as with their fabrication and characterization. The main focus will be on the material system GaN, InN and related compounds. Experience in semiconductor nanostructure fabrication and characterization will be very valuable.
ER#2 — Magneto-optics of InGaN and other semiconductor nanowires
Host institution: University of Cambridge, United Kingdom
Start: July 2011 (duration 24 months)
Contact: Prof. Richard Phillips
The person filling this postdoctoral position will be a highly skilled experimentalist who will conduct magneto-optical studies of single semiconductor nanowires using a low-temperature confocal microscope in magnetic fields up to 10 Tesla. The unique experimental setup has already been developed, and permits rotation of the sample in the magnetic field which gives a means of mapping spatial confinement effects. Experience in use of high resolution spectroscopic methods, single-mode fibre optics and computer control of instruments will be very valuable.
ER#3 — Optical studies of quantum heterostrucutres in nanowires
Host institution: Delft University of Technology, The Netherlands
Start: January 2011 (duration 24 months)
Contact: Dr. Val Zwiller
We are seeking applicants for a postdoc position. The project will concentrate on the development of new opto-electronics devices based on nanowire heterostructures, in particular on devices based on single quantum dots in nanowires operating at the single photon and single electron level. The student will work in close collaboration with epitaxial growers (TUE) to optimize the properties of quantum dots in nanowires based on III-V heterostructures. Work performed so far at TUD has demonstrated the operation of a single quantum dot LED in a nanowire. Optical studies, nanoprocessing and material characterization will be performed at TUD and in close collaboration with other groups in the network.
ER#4 — AFM measurements of piezo nanowire devices
Host institution: Centro Ricerche Fiat S.C.P.A., Torino, Italy
Start: January 2012 (duration 6 months)
Contact: Dr. Franca Albertini and Dr. Lucia Nasi
The six-months Post Doctoral position will focus on the morphological, elastic and electrical characterization of nanowires by scanning probe techniques, in the framework of different workpackages, with focus on sensing and energy harvesting applications. The candidates must hold a PhD in Physics or Chemistry or Material Science or a related field. Long-working experience in atomic force microscopy (AFM) at the nano-scale, both in contact and tapping mode, is required. Experience in electrical measurements and in scanning probe microscopy (SPM) methods (e.g.) nanomanipulation, electrically-based techniques are appreciated.
ER#5 — Transfer of optimised InGaN NW process to production MOCVD
Host institution:Aixtron AG, Herzogenrath, Germany
Start: June 2013 (duration 12 months)
Contact: Dr. Christoph Giesen
We are seeking applicants for a Post Doc position in the area of electrical engineering. In the work package "nanowires for optoelectronics" the focus is on the growth optimization of InGaN/GaN nanowires with respect to their optical emission properties and their implementation in nanoscale optoelectronic devices.
Based on the process development of the ESR the ER will be in charge of (i) the transfer of optimised deposition processes for InGaN based nanowires from R&D to production type MOCVD equipment; (ii) the correlation of process results with MOCVD equipment design and (iii) the development of concepts to optimised production type MOCVD equipment for the deposition of Nitride based nanostructures.
We are interested in building molecular tools out of